PART |
Description |
Maker |
BSP373 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.3 Ohm, 1.7A, NL SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO4804 |
OptiMOS Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS Small Signal MOSFET, 30V, SO-8, RDSon = 20mOhm, 8A, LL, dual
|
http:// Infineon Technologies AG
|
SN7002N |
SIPMOS Small-Signal-Transistor Low Voltage MOSFETs - SOT23, 60V, 5ohm, 0.2A
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSP613P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.13
|
Infineon
|
BSS138N |
Low Voltage MOSFETs - SOT23, 60V, 3.5Ohm, 0.23A SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO204P |
OptiMOS -P Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SO-8
|
Infineon Technologies A... Infineon Technologies AG
|
BSO201SP |
OptiMOS -P Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SO-8
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSO301 BSO301SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8 OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
MGSF3441XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
ON Semiconductor
|